S8050 TRANSISTOR (NPN) FEATURES z Complimentary to S8550 z Collector Current: IC=0.5A MARKING: J3Y MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipation 0.3 W Tj Junction Temperature 150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE=100μA, IC=0 5 V Collector cut-off current ICBO VCB=40 V , IE=0 0.1 μA Collector cut-off current ICEO VCB=20V , I E=0 0.1 μA Emitter cut-off current IEBO VEB= 5V , IC=0 0.1 μA hFE(1) VCE=1V, I C= 50mA 120 400 DC current gain hFE(2) VCE=1V, I C= 500mA 50 Collector-emitter saturation voltage VCE(sat) I=500 mA, IB= 50mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=500 mA, IB= 50mA 1.2 V Transition frequency fT VCE=6V, I C= 20mA f=30MHz 150 MHz SOT-23 1. BASE 2. EMITTER 3. COLLECTOR CLASSIFICATION OF hFE(1) Rank L H J Range 120-200 200-350 300-400