1200V
JRS040N120L
Silicon Carbide Schottky Diode
40A (TC=152°C)
213 nC
REACH
RoHS
HF
Features
Negligible reverse recovery
High-speed switching
Positive Temperature Coefficient
Temperature-Independent Switching
RoHS compliant
Benefits
Higher frequency
Case
low heat dissipation requirements
Reduce size and cost of the system
High-reliability
Applications
Switch mode power supply
Solar...
查看詳細 >>
JRS020N120L
SiC Schottky Barrier Rectifier
res
? Reverse withstand voltage 1200V
? Zero reverse recovery current
? High working frequency
? Switch characteristics are not affected by
temperature
? Fast switching speed
? Positive temperature coefficient of positive
pressure drop
Application
? Switching mode power supply, AC/DC converter
? Power factor correction
? Motor drive
? ...
查看詳細 >>
Datasheet
VRRM
1200V
JRS015N120L
Silicon Carbide Schottky Diode
15A (TC=160°c)
83 nC
Features
Revolutionary semiconductor material - Silicon
RoHS
REACH
HF
Carbide
High-speed switching
Low leakage current
Positive Temperature Coefficient
RoHS compliant
Benefits
Higher frequency
Case
Low heat dissipation requirements
Reduce size and cost of the system
High-reliability
Applications
Pow...
查看詳細 >>